parameter symbol value unit collector-base voltage v c b o 400 v collector-emitter voltage v c e o 200 v emitter-base voltage v e b o 6 v collector current i c 7.0 a base current i b 4.0 a total dissipation at p t o t 60 w max. operating junction temperature t j 150 o c storage temperature t s t g -55~150 o c BU406 high voltage switching parameter symbol test conditions min. typ. max. unit collector cut-off current i c e s v c e =400v, i e =0 5.0 ma v c e =250v, i e =0 0.1 emitter cut-off current i e b o v e b =6v, i c =0 1.0 ma collector-emitter sustaining voltage v c e o i c =50ma, i b =0 200 v dc current gain h f e ( 1 ) v c e =4v, i c =1.0a 10 collector-emitter saturation voltage v c e ( s a t ) i c =5.0a,i b =0.5a 1.0 v base-emitter saturation voltage v b e ( s a t ) i c =5.0a,i b =0.5a 1.2 v current gain bandwidth product f t v c e =10v, i c =0.5a 10 mhz turn off time t o f f i c =5a, i b =0.5a 0.75 us npn epitaxial silicon transistor product specification * use in horizontal deflection output stage electrical characteristics ( ta = 25 ) absolute maximum ratings ( ta = 25 ) to-220 tiger electronic co.,ltd
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